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I2302DDS-T1-BE3
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SI2302DDS-T1-BE3 , Vishay / Siliconix

Hersteller: Vishay / Siliconix
Mfr.Part #: SI2302DDS-T1-BE3
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PDF For SI2302DDS-T1-BE3

Beschreibung:
N-CHANNEL 20-V (D-S) MOSFET
Angebotsanfrage In Stock: 816082
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Technische Produktspezifikationen
Product Attribute Attribute Value
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 57mOhm @ 3.6A, 4.5V
Vgs (Max) ±8V
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds -
Fet Feature -
Power Dissipation (Max) 710mW (Ta)
Supplier Device Package SOT-23-3 (TO-236)
Fet Type N-Channel
Drain To Source Voltage (Vdss) 20 V
Vgs(Th) (Max) @ Id 850mV @ 250µA
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Querverweise
11930154
415
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