Technische Produktspezifikationen
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Taiwan Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 12 mOhms |
| Rise Time | 19 ns |
| Fall Time | 17 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 73.5 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | PDFN56-8 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Packaging | Cut Tape or Reel |
| Brand | Taiwan Semiconductor |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs Th - Gate-Source Threshold Voltage | 1.2 V |
| Qg - Gate Charge | 29 nC |
| Technology | Si |
| Id - Continuous Drain Current | 8 A |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Typical Turn-Off Delay Time | 14 ns |
| Typical Turn-On Delay Time | 1.4 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
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