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APT50GT60BRDQ2G
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APT50GT60BRDQ2G , Microchip / Microsemi

Hersteller: Microchip / Microsemi
Mfr.Part #: APT50GT60BRDQ2G
Paket: TO-247-3
RoHS:
Datenblatt:

PDF For APT50GT60BRDQ2G

Beschreibung:
IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS
Angebotsanfrage In Stock: 35
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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Microchip
Product Category IGBT Transistors
RoHS
Maximum Gate Emitter Voltage 30 V
Operating Temperature Range - 55 C to + 150 C
Mounting Style Through Hole
Pd - Power Dissipation 446 W
Product Type IGBT Transistors
Package / Case TO-247-3
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 2 V
Length 21.46 mm
Width 16.26 mm
Height 5.31 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Packaging Tube
Brand Microchip / Microsemi
Configuration Single
Continuous Collector Current 110 A
Continuous Collector Current At 25 C 110 A
Continuous Collector Current Ic Max 110 A
Gate-Emitter Leakage Current 120 nA
Technology Si
Factory Pack Quantity 1
Subcategory IGBTs
Unit Weight 1.340411 oz
Tradename Thunderbolt IGBT
Querverweise
782058
1156
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