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GD10N65T6ARMA1
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IGD10N65T6ARMA1 , Infineon Technologies

Hersteller: Infineon Technologies
Mfr.Part #: IGD10N65T6ARMA1
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IGD10N65T6ARMA1
Angebotsanfrage In Stock: 194722
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Technische Produktspezifikationen
Product Attribute Attribute Value
Mounting Type Surface Mount
Current - Collector (Ic) (Max) 23 A
Power - Max 75 W
Switching Energy 200µJ (on), 70µJ (off)
Td (On/Off) @ 25°C 30ns/106ns
Igbt Type Trench Field Stop
Supplier Device Package PG-TO252-3
Current - Collector Pulsed (Icm) 42.5 A
Input Type Standard
Gate Charge 27 nC
Operating Temperature -40°C ~ 175°C (TJ)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - Collector Emitter Breakdown (Max) 650 V
Vce(On) (Max) @ Vge, Ic 1.9V @ 15V, 8.5A
Test Condition 400V, 8.5A, 47Ohm, 15V
Reverse Recovery Time (Trr) -
Querverweise
11958982
415
/category/Semiconductors/Discrete-Semiconductors_415?proid=11958982&N=
$